Patterning of WOx, VOx, and MoOx thin-films with picosecond and nanosecond laser sources

نویسندگان

چکیده

Transition metal oxide (TMOs) layers have interesting properties as selective contacts, i.e., hole or electron transport for novel semiconductor devices. Especially, oxides of molybdenum (MoO3), vanadium (V2O5), and tungsten (WO3) show good bahaviour acting front hole-selective contacts n-type crystalline-silicon heterojunction solar cells. Laser scribing has been widely used thin-film ablation seems the appropriate technology device manufacturing with such non-conventional materials. In this work, we study laser non-stoichiometric evaporated WOx, VOx, MoOx films three different wavelengths (1064, 532, 355 nm) pulse duration in nanosecond picosecond regimes. The selection proper source allows a wide parametric window, complete removal TMO no alteration silicon substrate. results on isolation diodes their electrical characteristics quality processes.

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ژورنال

عنوان ژورنال: Procedia CIRP

سال: 2022

ISSN: ['2212-8271']

DOI: https://doi.org/10.1016/j.procir.2022.08.160